NX138BK
60 V, single N-channel Trench
MOSFET
29 January 2016
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Low threshold
voltage • Very fast switching • Trench
MOSFET technology • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source
voltage Tj = 25 °C
- - 60 V
VGS gate-source
voltage
-2...