NX3008NBKMB
30 V, single N-channel Trench
MOSFET
5 November 2022
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Very fast switching • Low threshold
voltage • Trench
MOSFET technology • ESD protection up to 2 kV • Ultra thin package profile with 0.
37 mm height
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source
voltage Tj = 25 °C
VGS
ga...