NX3008PBKMB
30 V, single P-channel Trench
MOSFET
Rev.
1 — 11 May 2012
Product data sheet
1.
Product profile
1.
1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.
2 Features and benefits
Very fast switching Low threshold
voltage Trench
MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile with 0.
37 mm height
1.
3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
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4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage V...