NX6020CAKS
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench
MOSFET
18 January 2018
Product data sheet
1.
General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Very fast switching • ElectroStatic Discharge (ESD) protection
3.
Applications
• Relay driver • High-speed line driver • Level shifter • Power supply converter
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS drain-source
voltage Tj = 25 °C
ID
drain current
VGS = 10 V; Ta...