HIGH-POWER GaAlAs IR EMITTER CHIPS
FEATURES
OD-880-C
.
014
• High reliability LPE GaAlAs IRLED chips
• Graded-bandgap LED structure for high radiant power output
.
014
• 880nm peak emission • Good bondability
• Good ohmic contacts (gold alloys)
EMITTING SURFACE
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GOLD CONTACTS
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006 N P .
003 .
005
All dimensions are nominal values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Forward
Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 20mA IF = 50mA IF = 100mA IR = 10MA VR = 0V 5 MIN 8 TYP 14 2 880 80 30 17 MAX ...