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OH023

GaAs hall element

Description

GaAs Hall Elements MA111 OH023 GaAs hall element Magnetic sensor s Features 0.95 2.9±0.2 2.8 –0.3 0.65±0.15 +0.2 Unit : mm 0.65±0.15 +0.2 1.5 –0.3 0.5R 1.9±0.2 q q q q Hall voltage : typ. 90mV(VC= 3V, B= 0.1T) Input resistance : typ. 2kΩ(min. 1.5kΩ) Output resistance : typ. 7kΩ (max. 10kΩ) Sealed in the Mini type (4-pin) package. Automatic insertion...


Panasonic Semiconductor

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