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OH10009

GaAs Hall Device

Description

GaAs Hall Devices OH10009 GaAs Hall Device Magnetic sensor I Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Sealed in the Mini type (4-pin) package. Allowing autom...


Panasonic Semiconductor

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