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High Speed GaAlAs Infrared Emitter C
C The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current.
This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame.
Especially this device is suited as the emitter of data transmission without cable.
FEATURES • Ultra high-speed : 25ns rise time • 880nm wavelength • Narrow beam angle • Low forward
voltage • High power and high reliability • Available for pulse operating A...