P0303BV
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3mΩ @VGS = 10V
ID 20A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
20 16 80
Avalanche Current
IAS 74
Avalanche Energy
L = 0.
1mH
EAS
278
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.
1 1.
4
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL R...