P0460BTF / P046BTFS
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.
6Ω @VGS = 10V
ID 4A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 600
Gate-Source
Voltage
VGS ±30
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
4 1.
5 16
Avalanche Current
IAS 4
Avalanche Energy
L = 10mH
EAS
81
Power Dissipation
TC = 25 °C TC = 100 °C
PD
25 10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambie...