P0460EIS
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.
3Ω @VGS = 10V
ID 4A
TO-251(IS)
1.
GATE 2.
DRAIN 3.
SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 600
Gate-Source
Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM IAS EAS
4 2.
5 20 4 80
Power Dissipation
TC = 25 °C TC = 100 °C
PD
62.
5 25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width li...