P082ABD8
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 8mΩ @VGS = 10V
ID 52A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
52 33 130
Avalanche Current
IAS 23
Avalanche Energy
L=0.
1mH
EAS
76
Power Dissipation
TC= 25 °C TC= 100°C
PD
36 14
Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limite...