P1260ETF / P1260ETFS
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
670mΩ @VGS = 10V
ID 12A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 600
Gate-Source
Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM IAS EAS
12 7.
6 48 7.
3 264
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited...