P2502IZG
Dual N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22mΩ @VGS = 4.
5V
ID 6.
3A
TSSOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 20
Gate-Source
Voltage
VGS ±8
Continuous Drain Current2 Pulsed Drain Current1
TA= 25 °C TA = 70 °C
ID IDM
6.
3 5 50
Avalanche Current
IAS 22
Avalanche Energy
L = 0.
1mH
EAS
23
Power Dissipation
TA = 25 °C TA= 70 °C
PD
1.
4 0.
9
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
90
1Pulse width lim...