P2504BDG
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 25mΩ @VGS = 10V
ID 32A
TO-252
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source
Voltage Gate-Source
Voltage
VDS
40 V
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
32 20
A 70
Avalanche Current
IAS 17
Avalanche Energy
L = 0.
3mH
EAS
44 mJ
Power Dissipation
TC = 25 °C TC = 100 °C
PD
41.
6 W
16.
6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambien...