28F512 512K (64K x 8)
CMOS FLASH MEMORY
Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase
Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program
Y 100 000 Erase Program Cycles
Y 12 0V g5% VPP Y High-Performance Read
120 ns Maximum Access Time
Y
CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0W Data Retention Power
Y Integrated Program Erase Stop Timers
Y Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface
Y Noise Immunity Features g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing
Y ETOX II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volu...