P3304QV
N&P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 28mΩ @VGS =10V
-40V
33mΩ @VGS = -10V
ID Channel 7A N -7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH.
LIMITS
Drain-Source
Voltage
N 40 VDS P -40
Gate-Source
Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70°C
N7 P -7 ID N 6 P -6
Pulsed Drain Current1
N 20 IDM P -20
Power Dissipation
TA = 25 °C TA = 70 °C
N 2
P PD
N 1.
3
P
Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
W °C
REV 1.
0
1 2014/9/29
P3304QV
N&P-Channel Enhancement Mode MOS...