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STP3NB90 STP3NB90FP
N-CHANNEL 900V - 4 Ω - 3.
5 A TO-220/TO-220FP PowerMesh™
MOSFET
R DS(on) 4.
2 Ω 4.
2 Ω ID 3.
5 A 3.
5 A Pw 110 W 35 W
TYPE
VDSS 900 V 900 V
STP3NB90 STP3NB90FP
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES
3 1 2
TO-220
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per ...