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STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STP5NA80 STP5NA80FI
VDSS
800 V 800 V
RDS(on)
2.
4 Ω 2.
4 Ω
ID
4.
7 A 2.
8 A
s TYPICAL RDS(on) = 1.
8 Ω s ± 30V GATE TO SOURCE
VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD
VOLTAGE SPREAD
DESCRIPTION This series of POWER
MOSFETS represents the most advanced high
voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLI...