P6002OAG
N&P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 60mΩ @VGS = 4.
5V
-20V
115mΩ @VGS = -4.
5V
ID 3.
4A -2.
5A
Channel N P
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH.
LIMITS
Drain-Source
Voltage
VDS
N 20 P -20
Gate-Source
Voltage
N ±8 VGS P ±8
Continuous Drain Current
TA = 25 °C TA = 70 °C
N 3.
4 P -2.
5 ID N 2.
7 P -2
Pulsed Drain Current1
N 15 IDM P -15
Avalanche Current1
N 5.
5 IAS P -12
Avalanche Energy
L = 0.
1mH
N 1.
5 EAS P 7.
4
Power Dissipation
TA = 25 °C TA = 70 °C
N 1.
14 P 1.
14 PD N 0.
72 P 0.
72
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °...