P6503FM6
P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
65mΩ @VGS = -4.
5V
ID -3.
6A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS -30
Gate-Source
Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-3.
6 -3 -19
Avalanche Current
IAS -19
Avalanche Energy
L=0.
1mH
EAS
18
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1 0.
5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1pusle width Limited by maximum junction tem...