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STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1
N-CHANNEL 800V - 1.
5Ω - 5.
4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III
MOSFET
TYPE STP6NC80Z/FP STB6NC80Z/-1
s s
VDSS 800V 800V
RDS(on) 1.
8 Ω 1.
8 Ω
ID 5.
4 A 5.
4 A
1 3
s s s
TYPICAL RDS(on) = 1.
5 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
D²PAK TO-220
3 1 2
TO-220FP
12
3
DESCRIPTION The third generation of MESH OVERLAY™ Power
MOSFETs for very high
voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD ...