PA210BL
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 3A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1,2
TA = 25 °C TA = 70 °C
ID IDM
3 1.
9 25
Avalanche Current
IAS 25
Avalanche Energy
L = 0.
1mH
EAS
33
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 0.
8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMB...