PBHV2160Z
600 V, 0.
1 A NPN high-
voltage low VCEsat (BISS) transistor
24 June 2015
Product data sheet
1.
General description
NPN high-
voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
2.
Features and benefits
• Low collector-emitter saturation
voltage VCEsat • High collector current capability • High collector current gain hFE at high IC
3.
Applications
• Electronic ballast for fluorecent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Hook switch for wired telecom • Switch Mode Power Supply (SMPS)
4.
Quick reference data
Table 1...