PBHV9560Z
600 V, 0.
5 A PNP high-
voltage low VCEsat (BISS) transistor
12 August 2014
Product data sheet
1.
General description
PNP high-
voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8560Z
2.
Features and benefits
• High
voltage • Low collector-emitter saturation
voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qualified
3.
Applications
• Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Automotive motor management • Hook switch for wired tel...