PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.
2 kΩ, R2 = 2.
2 kΩ
Rev.
01 — 16 January 2008 Product data sheet
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Product profile
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1 General description
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800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123ET.
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2 Features
I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation
voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance
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3 Applications
I Digital application in automotive and indust...