PBSM5240PF
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench
MOSFET
Rev.
2 — 20 April 2011
Product data sheet
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Product profile
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1 General description
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench
MOSFET.
The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.
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2 Features and benefits
Very low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
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