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PBSS3515E
15 V, 0.
5 A PNP low VCEsat (BISS) transistor
Rev.
01 — 18 April 2005 Product data sheet
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Product profile
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1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.
NPN complement: PBSS2515E.
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2 Features
s s s s s Low collector-emitter saturation
voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
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3 Applications
s s s s s s DC-to-DC conversion
MOSFET gate driving Motor control Charging circuits Low power switch...