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PBSS4041PZ
60 V, 5.
7 A PNP low VCEsat (BISS) transistor
Rev.
01 — 31 March 2010 Product data sheet
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Product profile
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1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4041NZ.
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2 Features and benefits
Very low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
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3 Applications
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