DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS4120T 20 V, 1 A NPN low VCEsat (BISS) transistor
Product data sheet
2003 Sep 29
NXP Semiconductors
20 V, 1 A NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4120T
FEATURES
• Low collector-emitter saturation
voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to
MOSFETs in specific
applications.
APPLICATIONS
• Power management – DC/DC conversion – Supply line switching – Battery charger – LCD backlighting.
• Peripheral driver – Driver in low supply
voltage applications (e.
g.
lamps and LEDs) – Inductiv...