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PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Rev.
02 — 27 June 2005 Product data sheet
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Product profile
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1 General description
NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160DS.
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2 Features
s s s s s Low collector-emitter saturation
voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
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3 Applications
s Dual low power switches (e.
g.
motors, fans) s Automotive appl...