PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
14 December 2012
Product data sheet
1.
General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP.
PNP/PNP complement: PBSS5230PAP.
2.
Features and benefits
• Very low collector-emitter saturation
voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified
3.
Applications
• Load switch • Battery-driven devices • Pow...