PBSS4240Z
40 V, 2 A NPN low VCEsat (BISS) transistor
16 October 2014
Product data sheet
1.
General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5240Z
2.
Features and benefits
• Low collector-emitter saturation
voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified
3.
Applications
• DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply
voltage applications (e.
g.
lamps and LEDs) • Inductive load driver (e.
g.
relays, buzzers and motors)...