DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor
Product data sheet Supersedes data of 2003 Nov 28
2004 Dec 06
NXP Semiconductors
30 V, 3 A NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4330X
FEATURES
• SOT89 (SC-62) package • Low collector-emitter saturation
voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICM RCEsat
collector-emitter
voltage collector current (DC) peak collector current equivalent on-resistance
MAX.
UNIT 30 V 3A 5A 100 mΩ
APPLICATIO...