PBSS5130PAP
30 V, 1 A PNP/PNP low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1.
General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4130PANP.
NPN/NPN complement: PBSS4130PAN.
2.
Features and benefits
• Very low collector-emitter saturation
voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified
3.
Applications
• Load switch • Battery-driven device...