DF N2 020 -6
PBSS5230PAP
11 January 2013
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
Product data sheet
1.
General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP.
NPN/NPN complement: PBSS4230PAN.
2.
Features and benefits
• • • • • •
Very low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified
3.
Applications
• • • • •
Load switch Bat...