PD1203BEA
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 11A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
11 9 44
Avalanche Current
IAS 24
Avalanche Energy
L = 0.
1mH
EAS
28
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.
3 1.
5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
0
1 2014/6/24
PD1203BEA
N-Channel Enhancement Mode
MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
S...