PD1503YVS-A
Dual N- Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 15.
5mΩ @VGS = 10V
Q1 30V 18mΩ @VGS = 10V
ID 9A 8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2 Q1
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TA = 25 °C TA = 70 °C
Avalanche Energy
L =0.
1mH
Power Dissipation
TA = 25 °C TA = 70 °C
Junction & Storage Temperature Range
VDS VGS
ID
IDM IAS EAS
PD
Tj, Tstg
30 30 ±20 ±20
98 76 35 30 29 21 42 24
2 1.
28 -55 to 150
UNITS V V
A
mJ W °C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITI...