PD55035-E PD55035S-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral
MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 35 W with 16.
9dB gain @ 500 MHz / 12.
5 V
■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies of up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF.
Device’s superio...