PD57060S-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral
MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 60 W with 14.
3dB gain@ 945 MHz/28 V ■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power
MOSFET.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
Device’s superior linearity performan...