Preliminary datasheet
30V Dual N-Channel
MOSFETs
PDB3814S
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
DFN2X2 Dual 2EP Pin Configuration
BVDSS 30V
RDSON 30m
ID 5.
0A
Features
30V,5.
0A, RDS(ON) =30mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
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S1 G1 D2
D1 G2 S2
D1 ...