Part Number
|
PDTA114EEF |
Manufacturer
|
NXP |
Description
|
PNP resistor-equipped transistor |
Published
|
Mar 22, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTA114EEF PNP resistor-equipped transistor
Preliminary specification Supers...
|
Datasheet
|
PDTA114EEF
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTA114EEF PNP resistor-equipped transistor
Preliminary specification Supersedes data of 1998 Nov 11 1999 May 21
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ.
10 kΩ each) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
1 Top view 2
MAM413
PDTA114EEF
PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION
handbo...
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