Part Number
|
PDTA123EMB |
Manufacturer
|
nexperia |
Description
|
PNP resistor-equipped transistor |
Published
|
Mar 4, 2019 |
Detailed Description
|
SOT883B
PDTA123EMB
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 2 — 4 May 2012
Product data sheet...
|
Datasheet
|
PDTA123EMB
|
Overview
SOT883B
PDTA123EMB
PNP resistor-equipped transistor; R1 = 2.
2 kΩ, R2 = 2.
2 kΩ
Rev.
2 — 4 May 2012
Product data sheet
1.
Product profile
1.
1 General description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTC123EMB.
1.
2 Features and benefits
100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified Leadless ultra small SMD plastic
package Low package height of 0.
37 mm
1.
3 Applications
Low-current peripheral driver Control of IC inputs
Replaces general-purpose tra...
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