PE614DX
Dual N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 12.
5mΩ @VGS = 4.
5V
ID 30A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±10
Continuous Drain Current3
Pulsed Drain Current1 Avalanche Current Avalanche Energy
Power Dissipation
TC= 25 °C TC = 100 °C TA = 25 °C TA= 70 °C
L = 0.
1mH TC= 25 °C TC = 100 °C TA = 25 °C TA= 70°C
ID
IDM IAS EAS
PD
30 19 11 9 80 22 24 17.
8 7 2.
5 1.
6
ESD Class
HBM
2kV
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Ju...