PFP9N90E / PFF9N90E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 50 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 1.
15Ω (Typ.
) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP9N90E / PFF9N90E
900V N-Channel
MOSFET
BVDSS = 900 V RDS(on) = 1.
15 Ω ID = 8.
5 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
1 2 3
1.
Gate 2.
Drain 3.
Source
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25oC unless otherwise specified
Symbol
P...