Feb 2009
PFP18N50 / PFF18N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
26 Ω (Typ.
) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP18N50 / PFF18N50
500V N-Channel
MOSFET
BVDSS = 500 V RDS(on) typ = 0.
26 Ω ID = 18 A
Drain
Gate
●
◀▲
● ●
Source
TO-220
TO-220F
1 2 3
1.
Gate 2.
Drain 3.
Source
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise spec...