PHB32N06LT
N-channel TrenchMOS logic level FET
Rev.
02 — 30 November 2009
Product data sheet
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Product profile
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1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
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2 Features and benefits
Suitable for logic level gate drive sources
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3 Applications
General purpose switching
Switched-mode power supplies
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4 Quick reference data
Table 1.
Quick reference
Symbol VDS ID
Parameter drain-source
voltage drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 5 V;...