PHB66NQ03LT
N-channel TrenchMOS logic level FET
Rev.
07 — 30 January 2009
Product data sheet
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Product profile
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1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
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2 Features and benefits
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
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3 Applications
DC-to-DC convertors
General purpose switching
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4 Quick reference data
Table 1.
Quick reference
Symbol VDS ID Ptot
Parameter drain-source
voltage drain current total p...