Part Number
|
PHX3N60E |
Manufacturer
|
NXP |
Description
|
PowerMOS transistors Avalanche energy rated |
Published
|
Mar 22, 2005 |
Detailed Description
|
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanc...
|
Datasheet
|
PHX3N60E
|
Overview
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package
PHX3N60E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 600 V
g
ID = 1.
7 A RDS(ON) ≤ 4.
4 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHX3N60E is supplied in the SOT186A full pack, isolated package.
PINNING
PIN 1 2 3 case gate drain s...
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