PK510BA
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.
3mΩ @VGS = 10V
ID2 86A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
86 ID
54 IDM 150
Continuous Drain Current
TA = 25 °C TA = 70 °C
21 ID 16
Avalanche Current
IAS 47
Avalanche Energy
L = 0.
1mH
EAS 110
Power Dissipation
TC = 25 °C TC = 100 °C
41 PD 16
Power Dissipation
TA = 25 °C TA = 70 °C
2.
5 PD 1.
6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
TH...